Lambert-W function-based parameter extraction for FDSOI MOSFETs down to deep cryogenic temperatures

• Lambert-W function-based MOSFET parameter extraction down to cryogenic temperature. modeling of drain current characteristics using classical mobility law 4.2 K. Main FDSOI parameters extracted versus temperature and gate length. Mobility degradation at short channel length due increased neutral defect scattering. The applicability the methodology is demonstrated for 28 nm MOSFETs deep temperatures (4.2 K). function enables accurately model inversion charge from weak strong inversion, while liquid helium main were length, showing independence effects